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HI-SINCERITY
MICROELECTRONICS CORP.
Spec. No. : HA200207 Issued Date : 1996.07.15 Revised Date : 2002.02.25 Page No. : 1/3
HSD879
SILICON NPN EPITAXIAL TYPE TRANSISTOR
Description
For 1.5V and 3v electronic flash use.
Features
* Charger-up time is about 1 ms faster than of a germanium transistor * Small saturation voltage can bring less power dissipation and flashing times
TO-92
Absolute Maximum Ratings
* Maximum Temperatures Storage Temperature ............................................................................................ -55 ~ +150 C Junction Temperature .................................................................................... +150 C Maximum * Maximum Power Dissipation Total Power Dissipation (Ta=25C) ................................................................................ 750 mW * Maximum Voltages and Currents (Ta=25C) BVCBO Collector to Base Voltage....................................................................................... 30 V BVCEX Collector to Emitter Voltage .................................................................................... 20 V BVCEO Collector to Emitter Voltage.................................................................................... 10 V BVEBO Emitter to Base Voltage............................................................................................ 6 V IC Collector Current............................................................................................................... 3 A IC Collector Current (Pluse) .................................................................................................. 5 A
Electrical Characteristics (Ta=25C)
Symbol BVCEO BVEBO BVCBO BVCEX ICBO IEBO *hFE *VCE(sat) fT Cob Min. 10 6 30 20 140 Typ. 210 0.3 200 30 Max. 100 100 400 0.4 Unit V V V V nA nA V MHZ pF Test Condition IC=1mA IE=10uA IC=10uA IC=1mA, VBE=3V VCB=20V VBE=4V VCE=2V, IC=3A IC=3A, IB=60mA VCE=10V, IC=50mA VCB=10V, f=1MHZ
*Pulse Test: Pulse Width 380us, Duty Cycle2%
HSD879
HSMC Product Specification
HI-SINCERITY
MICROELECTRONICS CORP.
Characteristics Curve
Current Gain & Collector Current
1000 125 C 75 C
o o
Spec. No. : HA200207 Issued Date : 1996.07.15 Revised Date : 2002.02.25 Page No. : 2/3
Saturation Voltage & Collector Current
1000 VCE(sat) @ IC=50IB
25 C
o
Saturation Voltage (mV)
hFE
100
75 C
o
hFE @ VCE=2V
125 C 25 C
o
o
100 1 10 100 1000 10000
10 1 10 100 1000 10000
Collector Current-IC (mA)
Collector Current-IC (mA)
Cutoff Frequency & Collector Current
1000
Capacitance & Reverse-Biased Voltage
100
Cutoff Frequency (MHz).. .
VCE=10V
Capacitance (pF)
100
Cob
10
10
1 1 10 100 1000
1 1 10 100
Collector Current (mA)
Reverse Biased Voltage (V)
Power Derating
800 700
Power Dissipation-PD (mW)
600 500 400 300 200 100 0 0 50 100
o
150
200
Ambient Temperature-Ta ( C)
HSD879
HSMC Product Specification
HI-SINCERITY
MICROELECTRONICS CORP.
TO-92 Dimension
A B
1 2 3
Date Code
Spec. No. : HA200207 Issued Date : 1996.07.15 Revised Date : 2002.02.25 Page No. : 3/3
2
Marking:
H SD 879 Control Code
3
C
Style: Pin 1.Emitter 2.Collector 3.Base
D
H I E F
G
1
3-Lead TO-92 Plastic Package HSMC Package Code: A
*: Typical
DIM A B C D E F
Inches Min. Max. 0.1704 0.1902 0.1704 0.1902 0.5000 0.0142 0.0220 *0.0500 0.1323 0.1480
Millimeters Min. Max. 4.33 4.83 4.33 4.83 12.70 0.36 0.56 *1.27 3.36 3.76
DIM G H I 1 2 3
Inches Min. Max. 0.0142 0.0220 *0.1000 *0.0500 *5 *2 *2
Millimeters Min. Max. 0.36 0.56 *2.54 *1.27 *5 *2 *2
Notes: 1.Dimension and tolerance based on our Spec. dated Apr. 25,1996.
2.Controlling dimension: millimeters. 3.Maximum lead thickness includes lead finish thickness, and minimum lead thickness is the minimum thickness of base material. 4.If there is any question with packing specification or packing method, please contact your local HSMC sales office.
Material:
* Lead: 42 Alloy; solder plating * Mold Compound: Epoxy resin family, flammability solid burning class: UL94V-0
Important Notice:
* All rights are reserved. Reproduction in whole or in part is prohibited without the prior written approval of HSMC. * HSMC reserves the right to make changes to its products without notice. * HSMC semiconductor products are not warranted to be suitable for use in Life-Support Applications, or systems. * HSMC assumes no liability for any consequence of customer product design, infringement of patents, or application assistance.
Head Office And Factory:
* Head Office (Hi-Sincerity Microelectronics Corp.): 10F.,No. 61, Sec. 2, Chung-Shan N. Rd. Taipei Taiwan R.O.C. Tel: 886-2-25212056 Fax: 886-2-25632712, 25368454 * Factory 1: No. 38, Kuang Fu S. Rd., Fu-Kou Hsin-Chu Industrial Park Hsin-Chu Taiwan. R.O.C Tel: 886-3-5983621~5 Fax: 886-3-5982931
HSD879
HSMC Product Specification

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